N-Channel Power MOSFET, 200V Drain-to-Source Voltage (Vdss) and 1.2A Continuous Drain Current (ID). Features 0.73ohm Rds On Max and 2.5W Max Power Dissipation. Operates from -55°C to 150°C with a 30V Gate-to-Source Voltage (Vgs). Surface mountable in an SOIC package, this silicon Metal-oxide Semiconductor FET offers 15ns fall time and 18ns turn-off delay time.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7464PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 1.2A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 730mR |
| Drain to Source Voltage (Vdss) | 200V |
| Dual Supply Voltage | 200V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 280pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 5.5V |
| Package Quantity | 4085 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 730mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7464PBF Datasheet
Download the complete datasheet for International Rectifier IRF7464PBF to view detailed technical specifications.
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