N-Channel Power MOSFET, 200V Drain-Source Voltage, 1.2A Continuous Drain Current, and 730mΩ Max Drain-Source On-Resistance. Features include 2.5W Max Power Dissipation, 280pF Input Capacitance, 15ns Fall Time, and 18ns Turn-Off Delay Time. This silicon Metal-oxide Semiconductor FET is designed for surface mounting in an SO-8 package, offering lead-free and RoHS compliance.
PackageSO
Current Rating1.2A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF7464TRPBF technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 1.2A |
| Current Rating | 1.2A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 730mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 730MR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 280pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 730mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 18ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7464TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7464TRPBF to view detailed technical specifications.
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