N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) for small signal applications. Features a 150V drain-source voltage (Vdss) and a continuous drain current (ID) of 1.9A. Offers a low drain-source on-resistance of 280mΩ maximum and a gate-source voltage (Vgs) of 30V. Packaged in a surface-mount SOIC (MS-012AA) with dimensions of 5mm length, 4mm width, and 1.5mm height. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2.5W. RoHS compliant and lead-free.
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International Rectifier IRF7465TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 1.9A |
| Current Rating | 1.9A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 280mR |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 1.5mm |
| Input Capacitance | 330pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 30V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 150V |
| Width | 4mm |
| RoHS | Compliant |
No datasheet is available for this part.
