
MOSFET MOSFT 30V 10A 15mOhm 21nC
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International Rectifier IRF7467TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 2.53nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarization | N |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 12mR |
| Series | HEXFET® |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 7.8ns |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7467TRPBF to view detailed technical specifications.
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