N-Channel Power MOSFET, SOIC package, featuring a 40V drain-source voltage and 11A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a maximum on-resistance of 13mΩ at a nominal 2V gate-source voltage. Operating across a wide temperature range from -55°C to 150°C, it supports a maximum power dissipation of 2.5W. The component is RoHS compliant.
PackageSOIC
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Technical Specifications
International Rectifier IRF7470TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 13MR |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Nominal Vgs | 2V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 800mV |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7470TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7470TRPBF to view detailed technical specifications.
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