N-channel MOSFET transistor in a surface-mount SOIC package. Features a 12V drain-to-source breakdown voltage and a continuous drain current of 11A. Offers a low 15mΩ drain-to-source resistance (Rds On Max) and a maximum power dissipation of 2.5W. Operates across a temperature range of -55°C to 150°C, with fast switching characteristics including a 7.5ns turn-on delay and a 7.5ns fall time.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7475TRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
12V
Drain to Source Resistance
15mR
Drain to Source Voltage (Vdss)
12V
Fall Time
7.5ns
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Input Capacitance
1.59nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
15mR
Series
HEXFET®
Turn-Off Delay Time
13ns
Turn-On Delay Time
7.5ns
Width
4mm
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRF7475TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7475TRPBF to view detailed technical specifications.
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