N-channel MOSFET transistor in a surface-mount SOIC package. Features a 12V drain-to-source breakdown voltage and a continuous drain current of 11A. Offers a low 15mΩ drain-to-source resistance (Rds On Max) and a maximum power dissipation of 2.5W. Operates across a temperature range of -55°C to 150°C, with fast switching characteristics including a 7.5ns turn-on delay and a 7.5ns fall time.
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International Rectifier IRF7475TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 7.5ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 1.59nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 15mR |
| Series | HEXFET® |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 7.5ns |
| Width | 4mm |
| RoHS | Not CompliantNo |
Download the complete datasheet for International Rectifier IRF7475TRPBF to view detailed technical specifications.
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