The IRF7476TRPBF is a single HEXFET JFET transistor with a maximum drain to source voltage of 12V and continuous drain current of 15A. It is packaged in a surface mount SOIC-8 package and has a maximum operating temperature range of -55°C to 150°C. The transistor has a maximum power dissipation of 2.5W and an input capacitance of 2.55nF.
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International Rectifier IRF7476TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 12V |
| Input Capacitance | 2.55nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| RoHS | Not CompliantNo |
Download the complete datasheet for International Rectifier IRF7476TRPBF to view detailed technical specifications.
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