N-channel MOSFET, surface mount, SOIC package. Features 30V drain-source breakdown voltage and 14A continuous drain current. Offers low on-resistance with a maximum of 8.5mR at 10V. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 2.5W. RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the International Rectifier IRF7477PBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRF7477PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 8.5MR |
| Dual Supply Voltage | 30V |
| Fall Time | 5.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 2.71nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 2.5V |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 8.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Series | HEXFET® |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 12ns |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7477PBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
