N-channel MOSFET, surface mount, SOIC package. Features 30V drain-source breakdown voltage and 14A continuous drain current. Offers low on-resistance with a maximum of 8.5mR at 10V. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 2.5W. RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
Quick Jump:
Technical Specifications
International Rectifier IRF7477PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 8.5MR |
| Dual Supply Voltage | 30V |
| Fall Time | 5.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 2.71nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 2.5V |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 8.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Series | HEXFET® |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 12ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7477PBF Datasheet
Download the complete datasheet for International Rectifier IRF7477PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
