The IRF7477TRPBF is a surface mount N-channel HEXFET MOSFET with a maximum drain current of 14A and a drain to source breakdown voltage of 30V. It features a low on-resistance of 8.5mR and a maximum power dissipation of 2.5W. The device is packaged in a lead-free SOIC-8 package and is RoHS compliant. It operates over a temperature range of -40°C to 150°C.
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International Rectifier IRF7477TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 14A |
| Current Rating | 14A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.71nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 8.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7477TRPBF to view detailed technical specifications.
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