N-Channel Power MOSFET, 60V Drain-Source Voltage, 7A Continuous Drain Current, and 26mΩ Max Drain-Source On-Resistance. This surface-mount device features a 1.74nF input capacitance and a 3V threshold voltage. With a 2.5W maximum power dissipation and operating temperatures from -55°C to 150°C, it offers fast switching with a 7.7ns turn-on delay and 13ns fall time. Packaged in a lead-free SOIC case, this RoHS compliant component is designed for efficient power management.
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International Rectifier IRF7478PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7A |
| Current Rating | 4.2A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 26MR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.74nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 7.7ns |
| DC Rated Voltage | 60V |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7478PBF to view detailed technical specifications.
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