N-Channel Power MOSFET, 60V Drain-Source Voltage, 7A Continuous Drain Current, and 26mΩ Max Drain-Source On-Resistance. This surface-mount device features a 1.74nF input capacitance and a 3V threshold voltage. With a 2.5W maximum power dissipation and operating temperatures from -55°C to 150°C, it offers fast switching with a 7.7ns turn-on delay and 13ns fall time. Packaged in a lead-free SOIC case, this RoHS compliant component is designed for efficient power management.
PackageSOIC
Current Rating4.2A
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier IRF7478PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7A
Current Rating
4.2A
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
26MR
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.74nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Elements
1
Packaging
Rail/Tube
Power Dissipation
2.5W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
3V
Turn-Off Delay Time
44ns
Turn-On Delay Time
7.7ns
DC Rated Voltage
60V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7478PBF Datasheet
Download the complete datasheet for International Rectifier IRF7478PBF to view detailed technical specifications.
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