N-Channel Power Field-Effect Transistor, 7A continuous drain current (ID) and 60V drain-to-source voltage (Vdss). Features a low 26mΩ maximum drain-source on-resistance (Rds On) and 2.5W maximum power dissipation. This silicon Metal-oxide Semiconductor FET is housed in a surface-mount SOIC package, measuring 5mm in length, 4mm in width, and 1.5mm in height. Operates across a temperature range of -55°C to 150°C, with turn-on delay time of 7.7ns and turn-off delay time of 44ns. Compliant with RoHS and REACH SVHC standards.
PackageSOIC
Current Rating7A
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier IRF7478TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7A |
| Current Rating | 7A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 26MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.74nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 26mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 7.7ns |
| DC Rated Voltage | 60V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7478TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7478TRPBF to view detailed technical specifications.
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