N-Channel Power Field-Effect Transistor, 7A continuous drain current (ID) and 60V drain-to-source voltage (Vdss). Features a low 26mΩ maximum drain-source on-resistance (Rds On) and 2.5W maximum power dissipation. This silicon Metal-oxide Semiconductor FET is housed in a surface-mount SOIC package, measuring 5mm in length, 4mm in width, and 1.5mm in height. Operates across a temperature range of -55°C to 150°C, with turn-on delay time of 7.7ns and turn-off delay time of 44ns. Compliant with RoHS and REACH SVHC standards.
PackageSOIC
Current Rating7A
MountingSurface Mount
Power2.5W
Quick Jump:
Technical Specifications
International Rectifier IRF7478TRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7A
Current Rating
7A
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
26MR
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.74nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
26mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
44ns
Turn-On Delay Time
7.7ns
DC Rated Voltage
60V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7478TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7478TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
