IRF7478TRPBF

N-Channel Power Field-Effect Transistor, 7A continuous drain current (ID) and 60V drain-to-source voltage (Vdss). Features a low 26mΩ maximum drain-source on-resistance (Rds On) and 2.5W maximum power dissipation. This silicon Metal-oxide Semiconductor FET is housed in a surface-mount SOIC package, measuring 5mm in length, 4mm in width, and 1.5mm in height. Operates across a temperature range of -55°C to 150°C, with turn-on delay time of 7.7ns and turn-off delay time of 44ns. Compliant with RoHS and REACH SVHC standards.