The IRF7484PBF is a surface mount N-CHANNEL HEXFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 40V and a continuous drain current of 14A. The device also features a maximum power dissipation of 2.5W and a drain-source on resistance of 10mR. The IRF7484PBF is packaged in a SOIC package and is RoHS compliant.
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International Rectifier IRF7484PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 10MR |
| Fall Time | 58ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 3.52nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 180ns |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7484PBF to view detailed technical specifications.
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