N-Channel Power MOSFET, Surface Mount, SOIC package. Features 200V Drain to Source Breakdown Voltage (Vdss) and 3.7A Continuous Drain Current (ID). Offers low 79mR Drain-Source On-Resistance (Rds On Max) and 2.5W Max Power Dissipation. Operates from -55°C to 150°C with fast switching times including 15ns Turn-On Delay and 27ns Turn-Off Delay.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7492TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 79mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 79MR |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.82nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 79mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 15ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7492TRPBF Datasheet
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