N-Channel Power MOSFET, 80V Vds, 9.3A continuous drain current, and 0.015 ohm maximum drain-source on-resistance. This single-element silicon Metal-Oxide-Semiconductor FET features a surface-mount SOIC package with dimensions of 5mm length, 4mm width, and 1.5mm height. It operates within a temperature range of -55°C to 150°C and offers a maximum power dissipation of 2.5W. Key electrical characteristics include 1.51nF input capacitance and 4V nominal Vgs.
PackageSOIC
Current Rating9.3A
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier IRF7493PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9.3A |
| Current Rating | 9.3A |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 15MR |
| Dual Supply Voltage | 80V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.51nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 8.3ns |
| DC Rated Voltage | 80V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7493PBF Datasheet
Download the complete datasheet for International Rectifier IRF7493PBF to view detailed technical specifications.
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