N-channel power MOSFET, 150V drain-source breakdown voltage, 5.1A continuous drain current, and 44mΩ maximum drain-source on-resistance. Features a 1.75nF input capacitance, 9ns turn-on delay, and 14ns fall time. Operates from -55°C to 150°C with a maximum power dissipation of 3W. Packaged in a lead-free, surface-mount SOIC package.
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International Rectifier IRF7494PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 44MR |
| Dual Supply Voltage | 150V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.75nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Rds On Max | 44mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 9ns |
| Width | 4mm |
| RoHS | Compliant |
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