IRF7494PBF

N-Channel MOSFET, 150V, 5.1A, 44mR Rds On, SOIC

N-channel power MOSFET, 150V drain-source breakdown voltage, 5.1A continuous drain current, and 44mΩ maximum drain-source on-resistance. Features a 1.75nF input capacitance, 9ns turn-on delay, and 14ns fall time. Operates from -55°C to 150°C with a maximum power dissipation of 3W. Packaged in a lead-free, surface-mount SOIC package.

PackageSOIC

MountingSurface Mount

PolarityN-CHANNEL

Power3W

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Technical Specifications

International Rectifier IRF7494PBF technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	5.1A
Drain to Source Breakdown Voltage	150V
Drain to Source Voltage (Vdss)	150V
Drain-source On Resistance-Max	44MR
Dual Supply Voltage	150V
Fall Time	14ns
Gate to Source Voltage (Vgs)	20V
Height	1.5mm
Input Capacitance	1.75nF
Lead Free	Lead Free
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.5W
Mount	Surface Mount
Nominal Vgs	4V
Number of Elements	1
Package Quantity	95
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	3W
Radiation Hardening	No
Rds On Max	44mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	HEXFET®
Termination	SMD/SMT
Turn-Off Delay Time	29ns
Turn-On Delay Time	9ns
Width	4mm