N-Channel Power MOSFET, 100V DC Rated Voltage, 7.3A continuous drain current, and 0.022ohm drain-source on-resistance. Features a 20V gate-to-source voltage, 5.25nF input capacitance, and 8.7ns turn-on delay. This surface mount device, housed in an SOP-8 package, operates from -55°C to 150°C and is RoHS compliant.
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International Rectifier IRF7495TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 7.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 22MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 5.25nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Packaging | Rail/Tube |
| Rds On Max | 4.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 8.7ns |
| DC Rated Voltage | 100V |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7495TRPBF to view detailed technical specifications.
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