20V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package
International Rectifier IRF7501TR technical specifications.
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | 2 N-Channel |
| Input Capacitance | 260pF |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 135mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| RoHS | Not Compliant |
No datasheet is available for this part.
