International Rectifier
IRF7503TR
Power Field-Effect Transistor, 2.4A I(D), 30V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
Current Rating2.4A
MountingSurface Mount
Power1.25W
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Technical Specifications
International Rectifier IRF7503TR technical specifications.
General
| Continuous Drain Current (ID) | 2.4A |
| Current Rating | 2.4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 135mR |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRF7503TR Datasheet
Download the complete datasheet for International Rectifier IRF7503TR to view detailed technical specifications.
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