Power Field-Effect Transistor, 2.4A I(D), 30V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
Sign in to ask questions about the International Rectifier IRF7503TR datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRF7503TR technical specifications.
| Continuous Drain Current (ID) | 2.4A |
| Current Rating | 2.4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 135mR |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| DC Rated Voltage | 30V |
| RoHS | Not CompliantNo |
Download the complete datasheet for International Rectifier IRF7503TR to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
