The IRF7506TR is a surface mount HEXFET MOSFET with a maximum drain to source breakdown voltage of -30V and a continuous drain current of 1.7A. It has a maximum power dissipation of 1.25W and an on-resistance of 270mR. The device is packaged in a cut tape format and is not RoHS compliant. It is rated for operation over a temperature range of -40°C to 150°C.
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International Rectifier IRF7506TR technical specifications.
| Continuous Drain Current (ID) | 1.7A |
| Current Rating | -1.7A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance | 180pF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 270mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| DC Rated Voltage | -30V |
| RoHS | Not Compliant |
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