International Rectifier
IRF7555TR
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
Current Rating-4.3A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7555TR technical specifications.
General
| Continuous Drain Current (ID) | 4.3A |
| Current Rating | -4.3A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance | 1.066nF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 55mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF7555TR Datasheet
Download the complete datasheet for International Rectifier IRF7555TR to view detailed technical specifications.
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