P-Channel MOSFET, surface mount, featuring 20V drain-source breakdown voltage and 4.3A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 55mΩ drain-source on-resistance. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.25W. The component is packaged in a MICRO-8 MSOP with tape and reel packaging, measuring 3mm in length and width, with a height of 0.86mm. It is lead-free and RoHS compliant.
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International Rectifier IRF7555TRPBF technical specifications.
| Package/Case | MSOP |
| Continuous Drain Current (ID) | 4.3A |
| Current Rating | -4.3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 55mR |
| Fall Time | 64ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.86mm |
| Input Capacitance | 1.066nF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 1.25W |
| Rds On Max | 55mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | -20V |
| Width | 3mm |
| RoHS | Compliant |
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