P-channel, 2-element, silicon Metal-oxide Semiconductor FET (MOSFET) for surface mounting. Features a continuous drain current of 4.7A and a drain-to-source breakdown voltage of -20V. Offers a low Rds On of 30mR, with turn-on delay time of 15ns and fall time of 210ns. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1W. Packaged in a TSSOP-8 for tape and reel distribution.
PackageTSSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1W
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Technical Specifications
International Rectifier IRF7750TRPBF technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4.7A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | -20V |
| Fall Time | 210ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.05mm |
| Input Capacitance | 1.7nF |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Nominal Vgs | -1.2V |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 30mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Threshold Voltage | -1.2V |
| Turn-Off Delay Time | 180ns |
| Turn-On Delay Time | 15ns |
| Width | 4.5mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7750TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7750TRPBF to view detailed technical specifications.
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