
P-channel, 2-element, silicon Metal-oxide Semiconductor FET (MOSFET) for surface mounting. Features a continuous drain current of 4.7A and a drain-to-source breakdown voltage of -20V. Offers a low Rds On of 30mR, with turn-on delay time of 15ns and fall time of 210ns. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1W. Packaged in a TSSOP-8 for tape and reel distribution.
International Rectifier IRF7750TRPBF technical specifications.
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