P-channel, 2-element, silicon Metal-oxide Semiconductor FET (MOSFET) for surface mounting. Features a continuous drain current of 4.7A and a drain-to-source breakdown voltage of -20V. Offers a low Rds On of 30mR, with turn-on delay time of 15ns and fall time of 210ns. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1W. Packaged in a TSSOP-8 for tape and reel distribution.
PackageTSSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1W
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Technical Specifications
International Rectifier IRF7750TRPBF technical specifications.
General
Package/Case
TSSOP
Continuous Drain Current (ID)
4.7A
Drain to Source Breakdown Voltage
-20V
Drain to Source Voltage (Vdss)
20V
Dual Supply Voltage
-20V
Fall Time
210ns
Gate to Source Voltage (Vgs)
12V
Height
1.05mm
Input Capacitance
1.7nF
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Nominal Vgs
-1.2V
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
30mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Threshold Voltage
-1.2V
Turn-Off Delay Time
180ns
Turn-On Delay Time
15ns
Width
4.5mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7750TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7750TRPBF to view detailed technical specifications.
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