Dual N-Channel MOSFET, 30V Drain-Source Voltage, 4.6A Continuous Drain Current. Features low 30mR Drain-Source On-Resistance, 7.2ns turn-on delay, and 11ns fall time. Operates with a 12V Gate-Source Voltage and 1W power dissipation. Packaged in a surface-mount TSSOP for efficient integration. RoHS compliant.
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International Rectifier IRF7752TRPBF technical specifications.
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 36mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 30mR |
| Fall Time | 11ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.05mm |
| Input Capacitance | 861pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 30mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 7.2ns |
| Width | 4.5mm |
| RoHS | Compliant |
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