Dual N-Channel MOSFET, 30V Drain-Source Voltage, 4.6A Continuous Drain Current. Features low 30mR Drain-Source On-Resistance, 7.2ns turn-on delay, and 11ns fall time. Operates with a 12V Gate-Source Voltage and 1W power dissipation. Packaged in a surface-mount TSSOP for efficient integration. RoHS compliant.
PackageTSSOP
MountingSurface Mount
PolarityN-CHANNEL
Power1W
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Technical Specifications
International Rectifier IRF7752TRPBF technical specifications.
General
Package/Case
TSSOP
Continuous Drain Current (ID)
4.6A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
36mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
30mR
Fall Time
11ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
1.05mm
Input Capacitance
861pF
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Nominal Vgs
2V
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
30mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
25ns
Turn-On Delay Time
7.2ns
Width
4.5mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7752TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7752TRPBF to view detailed technical specifications.
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