Surface mount N-channel MOSFET featuring a 20V drain-source breakdown voltage and 3.9A continuous drain current. This component offers a low 51mΩ Rds On max and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 9ns turn-on delay and 61ns fall time, with a 1.09nF input capacitance. Packaged in TSSOP, it has a maximum power dissipation of 1W.
International Rectifier IRF7755 technical specifications.
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 3.9A |
| Current Rating | -3.7A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 61ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 1.09nF |
| Lead Free | Contains Lead |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Rds On Max | 51mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| Turn-Off Delay Time | 89ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | -20V |
| Width | 4.4mm |
| RoHS | Not Compliant |
No datasheet is available for this part.
