N-Channel Power MOSFET, 30V Vds, 13A Continuous Drain Current, 11mΩ Max Rds(on). Features include a 16ns turn-on delay, 38ns turn-off delay, and 16ns fall time. This surface-mount device operates from -55°C to 150°C with a 2.5W power dissipation. Packaged in SOIC, it is RoHS compliant and lead-free.
PackageSOIC
Current Rating13A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF7805APBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
13A
Current Rating
13A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
11mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
11MR
Fall Time
16ns
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
3V
Number of Elements
1
Package Quantity
95
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
11mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
38ns
Turn-On Delay Time
16ns
DC Rated Voltage
30V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7805APBF Datasheet
Download the complete datasheet for International Rectifier IRF7805APBF to view detailed technical specifications.
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