N-Channel Power MOSFET, 30V Vds, 13A Continuous Drain Current, 11mΩ Max Rds(on). Features include a 16ns turn-on delay, 38ns turn-off delay, and 16ns fall time. This surface-mount device operates from -55°C to 150°C with a 2.5W power dissipation. Packaged in SOIC, it is RoHS compliant and lead-free.
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International Rectifier IRF7805APBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 13A |
| Current Rating | 13A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 11MR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
| RoHS | Compliant |
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