N-Channel Power MOSFET, featuring a 30V drain-to-source breakdown voltage and 13A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 11mΩ drain-to-source resistance. Designed for surface mounting in an SOIC package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Key switching characteristics include a 16ns turn-on delay and a 38ns turn-off delay.
PackageSOIC
Current Rating13A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF7805ATRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 13A |
| Current Rating | 13A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7805ATRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7805ATRPBF to view detailed technical specifications.
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