N-Channel Power MOSFET, 30V Vds, 13A continuous drain current, and 11mΩ maximum drain-source on-resistance. Features a 3V threshold voltage and operates within a -55°C to 150°C temperature range. This surface-mount device offers fast switching with 16ns turn-on and 16ns fall times, and a 38ns turn-off delay. Packaged in a lead-free, RoHS-compliant SOP-8 (MS-012AA) package with a maximum power dissipation of 2.5W.
International Rectifier IRF7805QPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 11MR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 16ns |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7805QPBF to view detailed technical specifications.
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