The IRF7805ZGPBF is a surface mount N-CHANNEL junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 2.5W and a drain to source breakdown voltage of 30V. The device is packaged in a small outline R-PDSO-G8 package and is RoHS compliant. The transistor has a continuous drain current of 16A and a drain to source resistance of 8.7mR. It is not radiation hardened and has a turn-off delay time of 14ns and a turn-on delay time of 11ns.
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International Rectifier IRF7805ZGPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 2.25V |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 11ns |
| RoHS | Compliant |
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