International Rectifier
IRF7805ZGPBF
Small Signal Field-Effect Transistor, 16A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7805ZGPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 2.25V |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 11ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7805ZGPBF Datasheet
Download the complete datasheet for International Rectifier IRF7805ZGPBF to view detailed technical specifications.
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