N-Channel MOSFET, 30V Drain-to-Source Voltage (Vdss), 16A Continuous Drain Current (ID). Features 2.25V Threshold Voltage, 2.08nF Input Capacitance, and 2.5W Max Power Dissipation. Operating temperature range from -55°C to 150°C. Surface mount SOIC package, 5mm length, 4mm width, 1.5mm height. RoHS and Lead Free compliant.
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International Rectifier IRF7805ZPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 2.08nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Threshold Voltage | 2.25V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
| RoHS | Compliant |
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