N-channel MOSFET with 30V drain-source breakdown voltage and 8.3A continuous drain current. Features low 25mΩ drain-source on-resistance and 2.5W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in an 8-pin SOIC surface-mount package, supplied on tape and reel. Includes fast switching times with turn-on delay of 12ns and fall time of 6ns.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7807ATRPBF technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 8.3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 25MR |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| Series | HEXFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 12ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7807ATRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7807ATRPBF to view detailed technical specifications.
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