N-channel MOSFET with integrated Schottky diode, featuring a 30V drain-source breakdown voltage and 8.3A continuous drain current. Offers a low 25mOhm drain-source on-resistance and a 14nC gate charge. Designed for surface mounting in a SOIC package, this component operates from -55°C to 150°C with a maximum power dissipation of 2.5W. RoHS compliant and lead-free.
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International Rectifier IRF7807D2TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.3A |
| Current Rating | 8.3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 25MR |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Series | FETKY™ |
| DC Rated Voltage | 30V |
| Width | 4mm |
| RoHS | Compliant |
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