N-channel MOSFET with integrated Schottky diode, featuring a 30V drain-source breakdown voltage and 8.3A continuous drain current. Offers a low 25mOhm drain-source on-resistance and a 14nC gate charge. Designed for surface mounting in a SOIC package, this component operates from -55°C to 150°C with a maximum power dissipation of 2.5W. RoHS compliant and lead-free.
PackageSOIC
Current Rating8.3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF7807D2TRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
8.3A
Current Rating
8.3A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
25MR
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
25mR
RoHS Compliant
Yes
Series
FETKY™
DC Rated Voltage
30V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7807D2TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7807D2TRPBF to view detailed technical specifications.
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