N-Channel Power MOSFET, 30V Vds, 8.3A Continuous Drain Current, 0.025 Ohm Rds(on). Features include 12V Gate-Source Voltage, 2.5W Power Dissipation, and a 150°C maximum operating temperature. This surface-mount device offers fast switching with a 12ns turn-on delay and 6ns fall time. It is RoHS compliant and constructed from silicon metal-oxide semiconductor technology.
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International Rectifier IRF7807PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.3A |
| Current Rating | 13A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 12V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 30V |
| Width | 4.05mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7807PBF to view detailed technical specifications.
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