N-Channel Power MOSFET, SOIC package, featuring 30V drain-source voltage and 8.3A continuous drain current. Offers a low 25mΩ maximum drain-source on-resistance. Designed for surface mounting with a 2.5W maximum power dissipation and operating temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 12ns and fall time of 6ns.
PackageSOIC
Current Rating13A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7807TRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
8.3A
Current Rating
13A
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
25MR
Fall Time
6ns
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Radiation Hardening
No
Rds On Max
25mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
25ns
Turn-On Delay Time
12ns
DC Rated Voltage
30V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7807TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7807TRPBF to view detailed technical specifications.
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