N-Channel Power MOSFET, SOIC package, featuring 30V drain-source voltage and 8.3A continuous drain current. Offers a low 25mΩ maximum drain-source on-resistance. Designed for surface mounting with a 2.5W maximum power dissipation and operating temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 12ns and fall time of 6ns.
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International Rectifier IRF7807TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.3A |
| Current Rating | 13A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 25MR |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
| RoHS | Compliant |
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