N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET, offers a continuous drain current of 11A and a drain-to-source breakdown voltage of 30V. Featuring a low drain-source on-resistance of 8.2mR, this surface-mount device operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. The SOIC package, measuring 5mm in length, 4mm in width, and 1.5mm in height, includes a nominal gate-to-source voltage of 1.8V and an input capacitance of 770pF. This RoHS compliant component is designed for lead-free assembly.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7807ZPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
18.2mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
8.2MR
Fall Time
3.1ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
770pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
1.8V
Number of Elements
1
Package Quantity
95
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1.8V
Turn-Off Delay Time
10ns
Turn-On Delay Time
6.9ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7807ZPBF Datasheet
Download the complete datasheet for International Rectifier IRF7807ZPBF to view detailed technical specifications.
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