N-Channel Power MOSFET, 30V Vds, 18A continuous drain current, and 6.5mΩ Rds On. Features include 15ns turn-on delay, 22ns turn-off delay, and 12ns fall time. This surface-mount device operates from -55°C to 150°C with a 3.1W power dissipation. Packaged in SOIC for tape and reel, it offers 5.5nF input capacitance and is RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
International Rectifier IRF7822TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 6.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 6.5MR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 5.5nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 6.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7822TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7822TRPBF to view detailed technical specifications.
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