N-channel MOSFET transistor, surface mountable in an 8-pin SOIC package. Features a 30V drain-to-source breakdown voltage and a continuous drain current of 13.6A. Offers a low on-resistance of 12.5mR at a 10V gate-source voltage. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Includes fast switching characteristics with turn-on delay of 6.3ns and fall time of 7.3ns.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7828TRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
13.6A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
12.5mR
Drain to Source Voltage (Vdss)
30V
Fall Time
7.3ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.01nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
12.5mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
9.7ns
Turn-On Delay Time
6.3ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7828TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7828TRPBF to view detailed technical specifications.
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