N-channel MOSFET transistor, surface mountable in an 8-pin SOIC package. Features a 30V drain-to-source breakdown voltage and a continuous drain current of 13.6A. Offers a low on-resistance of 12.5mR at a 10V gate-source voltage. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Includes fast switching characteristics with turn-on delay of 6.3ns and fall time of 7.3ns.
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International Rectifier IRF7828TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 13.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 12.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 7.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.01nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 12.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 9.7ns |
| Turn-On Delay Time | 6.3ns |
| Width | 4mm |
| RoHS | Compliant |
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