N-Channel Power MOSFET, 30V Vds, 21A Continuous Drain Current (ID), and 3.6mΩ Max Drain-Source On-Resistance. Features a 1-element silicon Metal-oxide Semiconductor FET design in a lead-free SOIC package for surface mounting. Operates from -55°C to 150°C with a 2.5W max power dissipation. Includes fast switching characteristics with a 5.3ns fall time and 18ns turn-on delay.
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International Rectifier IRF7831PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 21A |
| Current Rating | 21A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3.6MR |
| Fall Time | 5.3ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 6.24nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Threshold Voltage | 2.35V |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 18ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
| RoHS | Compliant |
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