N-Channel Power MOSFET, 30V Vds, 21A Continuous Drain Current (ID), and 3.6mΩ Max Drain-Source On-Resistance. Features a 1-element silicon Metal-oxide Semiconductor FET design in a lead-free SOIC package for surface mounting. Operates from -55°C to 150°C with a 2.5W max power dissipation. Includes fast switching characteristics with a 5.3ns fall time and 18ns turn-on delay.
PackageSOIC
Current Rating21A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF7831PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
21A
Current Rating
21A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
4.4mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
3.6MR
Fall Time
5.3ns
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Input Capacitance
6.24nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Elements
1
Package Quantity
95
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Threshold Voltage
2.35V
Turn-Off Delay Time
17ns
Turn-On Delay Time
18ns
DC Rated Voltage
30V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7831PBF Datasheet
Download the complete datasheet for International Rectifier IRF7831PBF to view detailed technical specifications.
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