N-Channel MOSFET, surface mount, SOIC package. Features 30V drain-source voltage, 20A continuous drain current, and 4mΩ maximum drain-source on-resistance. Operates with a nominal gate-source voltage of 2.32V, offering 12ns turn-on and 21ns turn-off delay times. Maximum power dissipation is 2.5W, with operating temperatures ranging from -55°C to 155°C. This component is RoHS compliant.
PackageSOIC
Current Rating20A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7832TRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
20A
Current Rating
20A
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
4MR
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
4.31nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
155°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
2.32V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
2.32V
Turn-Off Delay Time
21ns
Turn-On Delay Time
12ns
DC Rated Voltage
30V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7832TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7832TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.