N-Channel MOSFET, surface mount, SOIC package. Features 30V drain-source voltage, 20A continuous drain current, and 4mΩ maximum drain-source on-resistance. Operates with a nominal gate-source voltage of 2.32V, offering 12ns turn-on and 21ns turn-off delay times. Maximum power dissipation is 2.5W, with operating temperatures ranging from -55°C to 155°C. This component is RoHS compliant.
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International Rectifier IRF7832TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 4.31nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 155°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 2.32V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.32V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
| RoHS | Compliant |
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