The IRF7902TRPBF is a 2 N-Channel MOSFET with a drain to source breakdown voltage of 30V and a continuous drain current of 9.7A. It features a drain to source resistance of 18.7mR and a gate to source voltage of 20V. The device is packaged in a SOIC package and is lead free and RoHS compliant. It operates over a temperature range of -55°C to 150°C with a maximum power dissipation of 2W.
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International Rectifier IRF7902TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9.7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 18.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 22.6MR |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 580pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 22.6mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| RoHS | Compliant |
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