Dual N-channel MOSFET featuring 30V drain-source voltage and 11A continuous drain current. This surface-mount device in an 8-pin SOIC package offers a low Rds(on) of 16.2mΩ and a threshold voltage of 2.25V. Operating across a wide temperature range from -55°C to 150°C, it supports a gate-source voltage up to 20V and has a maximum power dissipation of 2W.
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International Rectifier IRF7904PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11A |
| Current Rating | 7.6A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 910pF |
| Lead Free | Exempt |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 16.2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2.25V |
| DC Rated Voltage | 30V |
| Width | 4mm |
| RoHS | Compliant |
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