N-Channel Power MOSFET, featuring 30V Drain-Source Voltage (Vdss) and 11A Continuous Drain Current (ID). This surface-mount SOIC package component offers a low 16.4mR maximum Drain-Source On-Resistance (Rds On) and 2W maximum power dissipation. It includes two N-Channel elements, with a nominal Gate-Source Voltage (Vgs) of 1.8V and a threshold voltage of 1.8V. Designed for efficient switching, it exhibits a fall time of 5.3ns and a turn-off delay time of 13ns. This RoHS compliant component operates within a temperature range of -55°C to 150°C.
PackageSOIC
Current Rating9.1A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF7907PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
11A
Current Rating
9.1A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
20.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
16.4MR
Fall Time
5.3ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
850pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
1.8V
Number of Elements
2
Package Quantity
95
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
16.4mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
1.8V
Turn-Off Delay Time
13ns
DC Rated Voltage
30V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7907PBF Datasheet
Download the complete datasheet for International Rectifier IRF7907PBF to view detailed technical specifications.
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