Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
Sign in to ask questions about the International Rectifier IRF820SPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRF820SPBF technical specifications.
| Continuous Drain Current (ID) | 2.5A |
| Current Rating | 2.5A |
| Drain to Source Breakdown Voltage | 500V |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 50W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF820SPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.