The IRF8302MTRPBF is a 30V N-channel MOSFET with a continuous drain current of 31A. It features a drain to source breakdown voltage of 30V and a drain to source resistance of 2.7mR. The device has an input capacitance of 6.03nF and a maximum power dissipation of 2.8W. It is packaged in a surface mount SOIC package and is RoHS compliant. The IRF8302MTRPBF operates over a temperature range of -40°C to 150°C.
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International Rectifier IRF8302MTRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 31A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.03nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Rds On Max | 1.8mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 22ns |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF8302MTRPBF to view detailed technical specifications.
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