N-Channel Power MOSFET featuring 30V drain-source voltage and 28A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.0022 ohms. Operating temperature range spans from -40°C to 150°C with a maximum power dissipation of 2.8W. Nominal gate-source voltage is 1.8V. This component is RoHS compliant.
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Technical Specifications
International Rectifier IRF8304MTRPBF technical specifications.
General
| Continuous Drain Current (ID) | 28A |
| Drain to Source Voltage (Vdss) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Nominal Vgs | 1.8V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF8304MTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF8304MTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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