International Rectifier
IRF8306MTRPBF
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
MountingSurface Mount
PolarityN-CHANNEL
Power75W
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Technical Specifications
International Rectifier IRF8306MTRPBF technical specifications.
General
| Continuous Drain Current (ID) | 23A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.11nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 75W |
| Rds On Max | 2.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF8306MTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF8306MTRPBF to view detailed technical specifications.
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