Power Field-Effect Transistor, 27A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MX, CAN, ISOMETRIC-3
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International Rectifier IRF8308MTRPBF technical specifications.
| Continuous Drain Current (ID) | 150A |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance | 4.404nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Rds On Max | 2.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF8308MTRPBF to view detailed technical specifications.
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