Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Sign in to ask questions about the International Rectifier IRF830PBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRF830PBF technical specifications.
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 4.5A |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 74W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF830PBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
