Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
International Rectifier IRF840ALPBF technical specifications.
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Voltage (Vdss) | 500V |
| Dual Supply Voltage | 500V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Through Hole |
| Power Dissipation | 3.1W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| DC Rated Voltage | 500V |
| RoHS | Compliant |
No datasheet is available for this part.
