N-Channel Power MOSFET featuring 500V drain-to-source breakdown voltage and 8A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.85 ohm drain-to-source resistance and a maximum gate-to-source voltage of 20V. Designed for high power applications with a 125W power dissipation, this component is RoHS compliant and available in a lead-free TO-220AB package.
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International Rectifier IRF840PBF technical specifications.
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 850mR |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 125W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| RoHS | Compliant |
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