Dual N-Channel HEXFET® Power MOSFET, SOIC-8 package. Features 30V drain-source breakdown voltage and 15.5mΩ maximum drain-source on-resistance at a nominal Vgs of 1.8V. Offers 8A continuous drain current and 2.4W maximum power dissipation. Operates from -55°C to 175°C with 766pF input capacitance. RoHS compliant, surface mount termination.
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International Rectifier IRF8513PBF technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 22.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 15.5MR |
| Dual Supply Voltage | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 766pF |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 2 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 15.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 1.8V |
| Width | 4mm |
| RoHS | Compliant |
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